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| SuperSOT SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS ISSUE 3 JUNE 1996 FEATURES FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 * * * * * * 625mW POWER DISSIPATION C B E IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ. Exhibits extremely low equivalent on-resistance; RCE(sat) DEVICE TYPE FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 COMPLEMENT FMMT617 FMMT618 FMMT619 FMMT624 PARTMARKING 717 718 720 722 723 RCE(sat) 72m at 2.5A 97m at 1.5A 163m at 1.5A - ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25C* Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg FMMT 717 -12 -12 -5 -10 -2.5 FMMT 718 -20 -20 -5 -6 -1.5 FMMT 720 -40 -40 -5 -4 -1.5 -500 625 -55 to +150 FMMT 722 -70 -70 -5 -3 -1.5 FMMT 723 -100 -100 -5 -2.5 -1 UNIT V V V A A mA mW C *Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices 3 - 159 FMMT717 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -12 -12 -5 TYP. -35 -25 -8.5 -100 -100 -100 -10 -100 -110 -180 -0.9 -0.8 300 300 180 60 45 80 475 450 275 100 70 110 21 70 130 30 MHz pF ns ns -17 -140 -170 -220 -1.0 -1.0 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-10V VEB=-4V VC ES=-10V IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-6V, IC=-2A IB1=IB2=50mA Emitter Cut-Off Current IEBO ICES VCE(sat) VBE(sat) VBE(on) Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 160 FMMT717 TYPICAL CHARACTERISTICS 1 +25C 0.8 0.7 0.6 0.5 0.4 I+/I*=10 100m 10m I+/I*=100 I+/I*=50 I+/I*=30 I+/I*=10 0.3 0.2 0.1 10 0.0 1mA 10mA 100C 25C -55C 1m 1m 10m 100m 1 100mA 1A 10A 100A Collector Current (A) Collector Current VCE(SAT) vs IC 1.6 1.4 450 25C VCE(SAT) vs IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 100C V+-=2V I+/I*=10 1.2 1.0 0.8 -55C 25C 100C -55C 225 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 0 100A 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current Collector Current hFE vs IC 10 VBE(SAT) vs IC SINGLE PULSE TEST Tamb = 25 deg C 1.2 1.0 0.8 0.6 0.4 0.2 V+-=2V -55C 25C 100C 1.0 0.1 D.C. 1s 100ms 10ms 1ms 100s 0.0 1mA 10mA 100mA 1A 10A 100A 0.01 0.1 1.0 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 161 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158 |
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